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FQP9N50C The FQP9N50C is a 500V, 9A N-Channel MOSFET from On Semiconductor. It is packaged in a TO-220-3 through-hole package with an 800mOhm drain-source on-resistance.
Mfr Part #:

FQP9N50C

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQP9N50C is a 500V, 9A N-Channel MOSFET from On Semiconductor. It is packaged in a TO-220-3 through-hole package with an 800mOhm drain-source on-resistance.
✓ Total Stock: 2,000 pcs

FQP9N50C Available from 1 distributor

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Components Technology Group, Inc. ✓
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2,000 pcs
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FQP9N50C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQP9N50C Description

Short technical summary and product information.

The FQP9N50C is a 500V N-Channel enhancement mode power MOSFET designed using Fairchild's proprietary QFET planar stripe DMOS technology. This device is optimized to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes.

 

Key electrical ratings include a continuous drain current of 9A at Tc=25°C, a pulsed drain current of 36A, and a maximum drain-source on-resistance of 800mOhm at Vgs=10V and Id=4.5A. The device features a low gate charge of 35nC (max) and an input capacitance of 1030pF, enabling fast switching. It also offers a single pulsed avalanche energy rating of 360mJ and a peak diode recovery dv/dt of 4.5V/ns.

 

The FQP9N50C is housed in a standard TO-220-3 through-hole package, making it suitable for a wide range of power conversion applications. It is well suited for high efficiency switched mode power supplies, active power factor correction circuits, and electronic lamp ballasts based on half-bridge topologies.

FQP9N50C Quick Information

Product Type: N-Channel MOSFET
Canonical Name: FQP9N50C N-Channel MOSFET, 500V, 9A, TO-220-3
Subcategory: Single N-Channel Power MOSFET

FQP9N50C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP9N50C Features

  • 500V drain-source breakdown voltage.
  • 9A continuous drain current.
  • 800mOhm on-resistance at 10V gate.
  • Low gate charge of 35nC.
  • Single pulsed avalanche energy 360mJ.

FQP9N50C Applications

  • Suitable for switched mode power supplies.
  • Ideal for active power factor correction.
  • Used in electronic lamp ballasts.
  • Applicable for high efficiency power conversion.

FQP9N50C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage (Vdss) of the FQP9N50C?

The drain-source voltage (Vdss) is 500V.

What is the maximum continuous drain current?

The maximum continuous drain current is 9A at Tc=25°C.

What is the drain-source on-resistance (Rds(on))?

The maximum Rds(on) is 800mOhm at Id=4.5A and Vgs=10V.

What is the package type of the FQP9N50C?

The package type is TO-220-3 (through-hole).

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (junction temperature).

Is the FQP9N50C RoHS compliant?

Yes, it is marked as RoHS3 Compliant, but this is unverified.

What is the total gate charge (Qg) of the FQP9N50C?

The maximum total gate charge is 35nC at Vgs=10V.

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