| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
35 pcs
|
35 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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The FQP9N50 is an N-Channel enhancement-mode MOSFET from On Semiconductor, designed for high-voltage switching applications. It offers a maximum drain-source voltage of 500V and a continuous drain current of 9A at case temperature. The device features a low on-resistance of 730mOhm typical at 4.5A and 10V gate drive, ensuring efficient power conversion.
Key electrical characteristics include a maximum gate threshold voltage of 5V at 250µA, input capacitance of 1450pF at 25V, and total gate charge of 36nC at 10V. The MOSFET can dissipate up to 147W power at case temperature, with an operating junction temperature range of -55°C to 150°C.
Packaged in a standard TO-220-3 through-hole package, the FQP9N50 is suitable for automated assembly and heatsink mounting. Its robust design makes it ideal for switch-mode power supplies, motor drivers, and other power control circuits.
500V maximum.
TO-220-3 through-hole package.
-55°C to 150°C junction temperature.
The component is RoHS3 compliant per the existing data, but this is unverified.
5V maximum at 250µA drain current.
730mOhm maximum at 4.5A drain current and 10V gate drive.
147W at case temperature.