FQP9N30 FQP9N30 is an N-Channel MOSFET from ON Semiconductor with 300V drain-source voltage, 9A continuous drain current, and 450mOhm on-resistance. It comes in a TO-220-3 through-hole package.
Mfr Part #:

FQP9N30

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQP9N30 is an N-Channel MOSFET from ON Semiconductor with 300V drain-source voltage, 9A continuous drain current, and 450mOhm on-resistance. It comes in a TO-220-3 through-hole package.
✓ Total Stock: 494 pcs

FQP9N30 Available from 1 distributor

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FQP9N30 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQP9N30 Description

Short technical summary and product information.

The FQP9N30 is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It features a drain-source voltage (Vdss) of 300V and a continuous drain current (Tc) of 9A, making it suitable for medium-voltage power switching applications. The device offers a maximum on-resistance (Rds(on)) of 450mOhm at Vgs=10V and Id=4.5A, with a gate threshold voltage (Vgs(th)) of up to 5V at Id=250µA.

 

For switching performance, the gate charge (Qg) is typically 22nC at Vgs=10V, and the input capacitance (Ciss) is 750pF at Vds=25V. The maximum gate-source voltage is rated at ±30V. These parameters indicate moderate switching speed suitable for frequencies up to several hundred kHz.

 

The MOSFET is housed in a TO-220-3 through-hole package, which allows for efficient heat dissipation. The maximum power dissipation is 98W (Tc) and the junction temperature range is -55°C to 150°C. The device is designed for through-hole mounting, facilitating easy integration into power circuit boards.

 

Typical applications include power supplies, DC-DC converters, motor drives, and inverters where high-voltage switching and moderate current handling are required. The device is also suitable for use in automotive and industrial systems that demand reliability and robust performance.

FQP9N30 Quick Information

Product Type: MOSFET
Canonical Name: FQP9N30 MOSFET N-Channel 300V 9A TO-220-3
Subcategory: N-Channel MOSFET

FQP9N30 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP9N30 Features

  • N-Channel MOSFET with 300V drain-source voltage.
  • Continuous drain current of 9A.
  • Low on-resistance of 450mOhm typical.
  • TO-220-3 through-hole package.
  • Operating temperature range -55°C to 150°C.

FQP9N30 Applications

  • Used in power supply switching circuits.
  • Suitable for DC-DC converter applications.
  • Ideal for motor control and inverters.
  • Employed in high-voltage switching designs.

FQP9N30 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQP9N30?

The FQP9N30 has a drain-source voltage rating of 300V.

What package does the FQP9N30 come in?

The FQP9N30 is available in a TO-220-3 through-hole package.

What is the operating temperature range of the FQP9N30?

The operating temperature range is -55°C to 150°C (junction).

Is the FQP9N30 RoHS compliant?

Yes, the FQP9N30 is listed as RoHS3 compliant, but this is unverified.

What is the maximum on-resistance of the FQP9N30?

The maximum on-resistance is 450mOhm at Vgs=10V, Id=4.5A.

What is the maximum gate charge of the FQP9N30?

The maximum gate charge is 22nC at Vgs=10V.

What is the maximum input capacitance of the FQP9N30?

The maximum input capacitance is 750pF at Vds=25V.

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