| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,336 pcs
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2336 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQP90N10V2 is an N-Channel enhancement mode power MOSFET manufactured using Fairchild's proprietary planar stripe DMOS technology. It is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes.
Key electrical specifications include a drain-source voltage of 100V, continuous drain current of 90A at 25°C case temperature, and a maximum on-state resistance of 10mΩ at VGS=10V and ID=45A. The device features a low gate charge of 191nC (max) and input capacitance of 6150pF, enabling fast switching. It is 100% avalanche tested with a single pulsed avalanche energy rating of 2430mJ.
The MOSFET is housed in a TO-220-3 through-hole package with a maximum power dissipation of 250W at 25°C case temperature. It operates over a junction temperature range of -55°C to 175°C and has a thermal resistance of 0.6°C/W from junction to case.
This device is well suited for DC-to-DC converters, synchronous rectification, and other applications requiring low on-state resistance. The gate-source voltage rating is ±30V, and the gate threshold voltage is 4V maximum at ID=250µA.
The drain-source voltage (VDSS) is 100V.
The continuous drain current is 90A at TC=25°C.
The maximum on-state resistance is 10mΩ at ID=45A and VGS=10V.
The operating junction temperature range is -55°C to 175°C.
The device is available in a TO-220-3 through-hole package.
The maximum power dissipation is 250W at TC=25°C.
The maximum gate threshold voltage is 4V at ID=250µA.