| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
76 pcs
|
76 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The FQP8N90C is a 900V N-Channel enhancement mode power MOSFET manufactured using Fairchild's proprietary planar stripe, DMOS technology. This advanced technology is designed to minimize on-state resistance and provide superior switching performance, making it suitable for high efficiency switch mode power supplies.
Key electrical specifications include a continuous drain current of 6.3A at 25°C, a pulsed drain current of 25A, and a low gate charge of typically 35 nC. The device offers a low RDS(on) of 1.9 Ohms at a VGS of 10V. It also features 100% avalanche tested and improved dv/dt capability.
The FQP8N90C is available in TO-220 and TO-220F packages, both supporting through-hole mounting. The operating and storage temperature range is -55°C to +150°C. Thermal resistance from junction to case is 0.73°C/W for the TO-220 package and 2.08°C/W for the TO-220F package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDSS) for the FQP8N90C is 900V.
The continuous drain current (ID) for the FQP8N90C at 25°C is 6.3A.
The on-resistance (RDS(on)) of the FQP8N90C is 1.9 Ohms when VGS is 10V.
The typical gate charge (Qg) for the FQP8N90C is 35 nC.
The FQP8N90C is available in TO-220 and TO-220F packages.
The operating and storage temperature range for the FQP8N90C is -55°C to +150°C.