FQP8N60C N-Channel MOSFET rated for 600V drain-source voltage and 7.5A continuous drain current. Housed in a TO-220-3 through-hole package.
Mfr Part #:

FQP8N60C

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 600V drain-source voltage and 7.5A continuous drain current. Housed in a TO-220-3 through-hole package.
✓ Total Stock: 20,626 pcs
$ Price Range: $0.70

FQP8N60C Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
19,708 pcs
19708 pcs On Request 1 On Request On Request 12+ On Request On Request
Non-Authorised Inventory information
918 pcs
918 pcs On Request 1 On Request On Request On Request On Request On Request

FQP8N60C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

FQP8N60C Description

Short technical summary and product information.

The FQP8N60C is an N-Channel MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications with a drain-source breakdown voltage of 600V and a continuous drain current of 7.5A at case temperature. The device features a maximum on-resistance of 1.2 Ohms at a gate drive of 10V and 3.75A drain current.

 

Key electrical characteristics include a typical gate charge of 36 nC and input capacitance of 1255 pF, enabling efficient switching performance. The gate threshold voltage is 4V maximum at 250µA, and the gate-source voltage rating is ±30V. Maximum power dissipation is 147W at case temperature, with an operating junction temperature range of -55°C to 150°C.

 

The MOSFET is housed in a standard TO-220-3 through-hole package, suitable for PCB mounting with heatsinking. This package provides good thermal performance for power applications. The part is RoHS3 compliant and has an MSL of 1 (unlimited). Note that this part number may reflect a transition from Fairchild Semiconductor to ON Semiconductor, as indicated by the manufacturer's documentation.

FQP8N60C Quick Information

Product Type: N-Channel MOSFET
Series: QFET
Canonical Name: FQP8N60C N-Channel MOSFET 600V 7.5A TO-220-3
Subcategory: N-Channel MOSFET

FQP8N60C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP8N60C Estimated Pricing

Qty Low High
879+ $0.70 $0.70

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQP8N60C Features

  • N-Channel MOSFET with 600V drain-source voltage.
  • Continuous drain current rating of 7.5A.
  • Low on-resistance of 1.2 Ohms at 10V gate drive.
  • TO-220-3 through-hole package for easy mounting.
  • RoHS3 compliant and MSL 1 rated.

FQP8N60C Applications

  • Suitable for high-voltage switching power supplies.
  • Used in AC-DC converters and inverters.
  • Ideal for motor control circuits.
  • Applicable in lighting ballasts.

FQP8N60C FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQP8N60C?

600V.

What package is the FQP8N60C available in?

TO-220-3 through-hole package.

What is the operating temperature range of the FQP8N60C?

-55°C to 150°C (junction).

Is the FQP8N60C RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the maximum drain current of the FQP8N60C?

7.5A at case temperature.

What is the gate threshold voltage of the FQP8N60C?

4V maximum at 250µA drain current.

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