| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,027 pcs
|
5027 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
17 pcs
|
17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP85N06 is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-efficiency power switching applications requiring a drain-source voltage rating of 60V and a continuous drain current of 85A (at case temperature). The device features a low maximum on-resistance of 10mOhm at a gate drive of 10V and a drain current of 42.5A.
The MOSFET has a maximum gate charge of 112nC at 10V and an input capacitance of 4120pF at 25V drain-source voltage. The gate threshold voltage is 4V maximum at 250µA drain current, and the maximum gate-source voltage is ±25V. These characteristics enable efficient switching with moderate gate drive requirements.
The device is housed in a TO-220-3 through-hole package, suitable for mounting on a heatsink. It can operate over a junction temperature range of -55°C to 175°C and can dissipate up to 160W at case temperature. The package is lead-free and RoHS compliant (unverified).
60V.
TO-220-3 through-hole package.
-55°C to 175°C (junction).
RoHS3 Compliant (unverified).
85A at case temperature.
10mOhm maximum at 42.5A drain current and 10V gate drive.
112nC maximum at 10V gate-source voltage.