FQP7N80C The FQP7N80C is an N-Channel MOSFET from ON Semiconductor with a drain-source voltage rating of 800V and a drain current rating of 6.6A. It is available in a TO-220-3 through-hole package.
Mfr Part #:

FQP7N80C

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQP7N80C is an N-Channel MOSFET from ON Semiconductor with a drain-source voltage rating of 800V and a drain current rating of 6.6A. It is available in a TO-220-3 through-hole package.
✓ Total Stock: 17,040 pcs

FQP7N80C Available from 3 distributors

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14,000 pcs
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1,740 pcs
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FQP7N80C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQP7N80C Description

Short technical summary and product information.

The FQP7N80C is an N-Channel MOSFET from ON Semiconductor designed for high-voltage power switching applications. It features a maximum drain-source voltage of 800V and a continuous drain current of 6.6A at case temperature (Tc). The device is housed in a TO-220-3 through-hole package, making it suitable for power electronics designs.

 

This MOSFET offers a maximum drain-source on-resistance of 1.9 Ohm at a gate-source voltage of 10V and drain current of 3.3A. The maximum gate threshold voltage is 5V at 250µA, and the gate-source voltage can reach ±30V. Total gate charge is 35nC at Vgs=10V, and input capacitance is 1680pF at Vds=25V. With a maximum power dissipation of 167W and an operating junction temperature range of -55°C to 150°C, it is designed for demanding thermal environments.

 

The TO-220-3 package provides excellent thermal performance and is straightforward to mount on a heatsink, making it suitable for through-hole assembly in power supplies, motor controllers, and other industrial equipment.

FQP7N80C Quick Information

Product Type: MOSFET
Canonical Name: FQP7N80C N-Channel MOSFET
Subcategory: Single N-Channel MOSFET

FQP7N80C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP7N80C Features

  • 800V maximum drain-source voltage rating.
  • 6.6A continuous drain current capability.
  • 1.9 Ohm maximum on-resistance at 10V gate drive.
  • TO-220-3 through-hole package for easy mounting.
  • Operating temperature range of -55°C to 150°C.

FQP7N80C Applications

  • Suitable for switch-mode power supply designs.
  • Used in AC-DC power conversion circuits.
  • Appropriate for high-voltage switching applications.

FQP7N80C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQP7N80C?

The maximum drain-source voltage (Vdss) is 800V.

What is the drain current rating of the FQP7N80C?

The maximum continuous drain current is 6.6A at case temperature (Tc).

What is the on-resistance of the FQP7N80C?

The maximum drain-source on-resistance is 1.9 Ohm at Vgs=10V and Id=3.3A.

What is the maximum power dissipation of the FQP7N80C?

The maximum power dissipation is 167W at case temperature (Tc).

What is the operating temperature range of the FQP7N80C?

The operating junction temperature range is -55°C to 150°C.

What package is the FQP7N80C available in?

The FQP7N80C is offered in a TO-220-3 through-hole package.

Is the FQP7N80C RoHS compliant?

The part is listed as RoHS3 compliant in the database; however, this compliance status is unverified and should be confirmed with the manufacturer.

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