| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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200 pcs
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200 pcs | On Request | 1 | On Request | On Request | 1451+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP7N80 is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. It features a drain-source breakdown voltage of 800V and a continuous drain current rating of 6.6A at case temperature (Tc). The device has a maximum on-resistance of 1.5 Ohms at a gate drive voltage of 10V and a drain current of 3.3A.
This MOSFET utilizes Metal Oxide (MOSFET) technology and is designed for high-voltage switching applications. It offers a maximum gate charge of 52 nC at 10V and an input capacitance of 1850 pF at 25V drain-source voltage, enabling efficient gate drive performance. The maximum power dissipation is 167W at case temperature.
The FQP7N80 is supplied in a standard TO-220-3 package with through-hole mounting, suitable for PCB assembly and heatsinking. It operates over a junction temperature range of -55°C to 150°C. The device is RoHS3 compliant and has an MSL rating of 1 (Unlimited).
The drain-source breakdown voltage (Vdss) is 800V.
The maximum continuous drain current is 6.6A at case temperature (Tc).
The maximum on-resistance (Rds On) is 1.5 Ohms at Id=3.3A and Vgs=10V.
The FQP7N80 is supplied in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
Yes, the FQP7N80 is listed as RoHS3 Compliant, though this is unverified.
The maximum gate threshold voltage (Vgs(th)) is 5V at Id=250µA.