| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
157 pcs
|
157 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP7N40 is a high-voltage N-Channel MOSFET manufactured by On Semiconductor. It utilizes MOSFET (Metal Oxide) technology and is designed for switching and amplifier applications. The device has a drain-source voltage (Vdss) of 400V and a continuous drain current (Id) of 7A. It requires a gate drive voltage of 10V for optimal on-resistance, with a maximum Rds(on) of 800mOhm at 3.5A and 10V. The gate threshold voltage (Vgs(th)) is a maximum of 5V at 250µA. The gate charge (Qg) is 22nC at 10V, and the input capacitance (Ciss) is 780pF at 25V. The maximum power dissipation is 98W, and the device can operate over a junction temperature range of -55°C to 150°C. The FQP7N40 is a through-hole component with a TO-220-3 package, commonly used for power supply, motor control, and inverter circuits.
The drain-source voltage (Vdss) is 400V.
The continuous drain current (Id) is 7A.
The package is TO-220-3.
The operating junction temperature range is -55°C to 150°C.
The maximum on-resistance is 800mOhm at 3.5A and 10V gate drive.
The maximum gate threshold voltage is 5V at 250µA.
The part is marked RoHS3 Compliant, but this is unverified.