FQP6N90C The FQP6N90C is an N-Channel MOSFET from On Semiconductor, rated for 900V drain-source voltage and 6A drain current. It comes in a TO-220-3 through-hole package.
Mfr Part #:

FQP6N90C

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQP6N90C is an N-Channel MOSFET from On Semiconductor, rated for 900V drain-source voltage and 6A drain current. It comes in a TO-220-3 through-hole package.
✓ Total Stock: 28,251 pcs

FQP6N90C Available from 4 distributors

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FQP6N90C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQP6N90C Description

Short technical summary and product information.

The FQP6N90C is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It features a maximum drain-to-source voltage of 900V and a maximum drain current of 6A at case temperature (Tc). The device has a maximum on-resistance of 2.3 ohms at a gate-source voltage of 10V and a drain current of 3A.

 

This MOSFET is designed for high-voltage switching applications. It offers a maximum gate charge of 40 nC at 10V and an input capacitance of 1770 pF at 25V, which are important for estimating switching losses and gate drive requirements. The maximum gate threshold voltage is 5V at 250µA, and the maximum gate-source voltage is ±30V.

 

The device is housed in a TO-220-3 package with through-hole mounting, suitable for power applications requiring heat sinking. It can dissipate up to 167W at case temperature (Tc) and operates over a junction temperature range of -55°C to 150°C.

FQP6N90C Quick Information

Product Type: MOSFET
Series: QFET
Canonical Name: N-Channel MOSFET, 900V, 6A, TO-220-3
Subcategory: Single N-Channel MOSFET

FQP6N90C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP6N90C Features

  • N-Channel MOSFET with 900V drain-source voltage.
  • 6A drain current at case temperature.
  • Low on-resistance of 2.3 ohms at 10V.
  • TO-220-3 through-hole package for easy mounting.
  • Operating temperature range from -55°C to 150°C.

FQP6N90C Applications

  • Ideal for high-voltage power switching circuits.
  • Used in switch-mode power supplies.
  • Suitable for motor control applications.
  • Applicable in power inverter designs.

FQP6N90C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FQP6N90C?

The maximum drain-to-source voltage is 900V.

What is the maximum drain current of the FQP6N90C?

The maximum drain current is 6A at case temperature (Tc).

What is the on-resistance of the FQP6N90C?

The maximum on-resistance is 2.3 ohms at a drain current of 3A and gate-source voltage of 10V.

What is the package type of the FQP6N90C?

The FQP6N90C is available in a TO-220-3 through-hole package.

What is the operating temperature range of the FQP6N90C?

The operating junction temperature range is -55°C to 150°C.

What is the maximum power dissipation of the FQP6N90C?

The maximum power dissipation is 167W at case temperature (Tc).

What is the gate threshold voltage of the FQP6N90C?

The maximum gate threshold voltage is 5V at a drain current of 250µA.

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