| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP6N90 is an N-Channel enhancement-mode MOSFET from On Semiconductor. It is rated for a maximum drain-to-source voltage of 900V and a continuous drain current of 5.8A at case temperature. This makes it suitable for high-voltage power switching applications.
The device features a maximum on-resistance of 1.9 Ohm at a gate-to-source voltage of 10V and a drain current of 2.9A. The gate threshold voltage is a maximum of 5V at 250µA, and the gate-source voltage rating is ±30V. Total gate charge is 52 nC at 10V, and input capacitance is 1880 pF at 25V drain-source voltage.
The FQP6N90 is housed in a TO-220-3 through-hole package, which aids thermal management. It can dissipate up to 167W at case temperature and operates over a junction temperature range of -55°C to 150°C.
The maximum drain-to-source voltage is 900V.
It is offered in a TO-220-3 through-hole package.
The junction temperature range is -55°C to 150°C.
It is listed as RoHS3 compliant, though the status is unverified.
The maximum continuous drain current is 5.8A at case temperature.
The maximum on-resistance is 1.9 Ohm at Vgs=10V and Id=2.9A.
The maximum power dissipation is 167W at case temperature.