| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,450 pcs
|
5450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,320 pcs
|
1320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP6N80C is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor (formerly Fairchild Semiconductor). It is designed for high-voltage switching applications requiring up to 800V drain-source voltage and 5.5A continuous drain current. The device features a maximum on-resistance of 2.5 Ohms at 10V gate drive with 2.75A drain current, ensuring efficient power conversion.
Key electrical characteristics include a maximum gate charge of 30 nC at 10V and an input capacitance of 1310 pF at 25V drain-source voltage, enabling moderate switching speeds. The gate threshold voltage is 5V maximum at 250 µA, and the gate-source voltage rating is ±30V. Maximum power dissipation is 158W at case temperature, and the device operates over a junction temperature range of -55°C to 150°C.
The FQP6N80C is housed in a standard TO-220-3 package with through-hole mounting, suitable for PCB assembly with heatsinking. It is compliant with RoHS3 and REACH unaffected, and has a moisture sensitivity level of 1 (unlimited). This part is a direct replacement for the Fairchild FQP6N80C and is available through major distributors.
The maximum drain-source voltage is 800 V.
The FQP6N80C is available in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
Based on available data, the FQP6N80C is RoHS3 compliant (unverified).
The maximum continuous drain current is 5.5 A at case temperature.
The maximum gate threshold voltage is 5 V at 250 µA drain current.
The maximum power dissipation is 158 W at case temperature.