| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
34,816 pcs
|
34816 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP6N60C is an N-Channel enhancement mode power MOSFET manufactured by On Semiconductor. It is designed for high-voltage switching applications requiring low on-resistance and fast switching performance.
Key electrical specifications include a drain-source voltage (Vdss) of 600V, a continuous drain current of 5.5A (at Tc), and a maximum on-resistance (Rds(on)) of 2 Ohms at Vgs = 10V and Id = 2.75A. The device features a gate threshold voltage of 4V at 250µA, a maximum gate charge of 20 nC at Vgs = 10V, and an input capacitance of 810 pF at Vds = 25V. Maximum power dissipation is 125W at case temperature.
Packaged in a standard TO-220-3 through-hole package, it is suitable for use in power supplies, motor control circuits, and other general-purpose power switching applications. The operating junction temperature range is -55°C to 150°C.
The maximum drain-source voltage (Vdss) is 600V.
The maximum continuous drain current is 5.5A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 2 Ohms at Vgs = 10V and Id = 2.75A.
The operating junction temperature range is -55°C to 150°C.
The device is packaged in a through-hole TO-220-3 package.
The maximum gate threshold voltage (Vgs(th)) is 4V at Id = 250µA.
The maximum power dissipation is 125W at case temperature (Tc).