| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Current | |
| Current | |
| Current - Pulsed (Note 1) | |
| Drain Current (Continuous) @ Tc=100°C | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Breakdown Voltage | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Forward Transconductance | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Peak Diode Recovery dv/dt | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Repetitive Avalanche Energy | |
| Single Pulsed Avalanche Energy | |
| Supplier Device Package | |
| Technology | |
| Thermal Resistance (Case to Sink) | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| drain_leakage_current (Maximum @ Vds = 480 V, Tc = 125 °C) | |
| drain_leakage_current (Maximum @ Vds = 600 V, Vgs = 0 V) | |
| gate_leakage_current (Maximum @ Vgs = -30 V, Vds = 0 V) |
The FQP6N60 is an N-Channel enhancement mode power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe DMOS technology. It features a drain-source voltage (Vdss) of 600V and a continuous drain current of 6.2A at 25°C (3.9A at 100°C). The on-resistance (Rds(on)) is a maximum of 1.5 Ohm at Vgs = 10V and Id = 3.1A. The device has a low gate charge (Qg max 25 nC at Vgs = 10V) and low input capacitance (Ciss max 1000 pF at Vds = 25V), enabling fast switching performance. It is 100% avalanche tested with a single pulsed avalanche energy rating of 440 mJ. The MOSFET comes in a TO-220-3 through-hole package and operates over a junction temperature range of -55°C to 150°C. Typical applications include high efficiency switch mode power supplies and general purpose high voltage switching circuits.
600V.
TO-220-3.
-55°C to 150°C (junction).
RoHS3 Compliant (unverified, low confidence).
6.2A.
25 nC (max) at Vgs = 10V.
1.5 Ohm at Id = 3.1A, Vgs = 10V.