Mfr Part #:

FQP6N50C

FQP6N50C is a 500V, 5.5A N-Channel MOSFET from On Semiconductor in a TO-220-3 through-hole package. It features low on-resistance of 1.2Ω and fast switching.

✓ Total Stock: 4,000 pcs

FQP6N50C Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	4,000 pcs On Request	4000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FQP6N50C Description

Short technical summary and product information.

The FQP6N50C is a 500V, 5.5A N-Channel enhancement mode power MOSFET manufactured by On Semiconductor (formerly Fairchild Semiconductor). It is designed using planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.

Key electrical specifications include a drain-source voltage (Vdss) of 500V, continuous drain current of 5.5A at 25°C (3.5A at 100°C), and a pulsed drain current rating of 22A. The maximum drain-source on-resistance is 1.2Ω at Vgs=10V and Id=2.8A. Gate charge is typically 19nC (maximum 25nC) at 10V, and input capacitance is 700pF maximum at Vds=25V.

The device is 100% avalanche tested, with a single pulsed avalanche energy rating of 300mJ and repetitive avalanche energy of 9.8mJ. It offers improved dv/dt capability with a peak diode recovery dv/dt of 4.5 V/ns. Thermal characteristics include a junction-to-case thermal resistance of 1.28°C/W maximum and power dissipation of 98W at 25°C case temperature.

The FQP6N50C is housed in a standard TO-220-3 through-hole package, suitable for high-efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topologies.

FQP6N50C Quick Information

Product Type: N-Channel MOSFET

Series: QFET

Canonical Name: FQP6N50C 500V N-Channel MOSFET

Subcategory: N-Channel MOSFET

FQP6N50C Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

FQP6N50C Features

500V drain-source voltage rating.
5.5A continuous drain current at 25°C.
Low on-resistance of 1.2Ω at 10V.
100% avalanche tested for reliability.
TO-220-3 through-hole package.

FQP6N50C Applications

High-efficiency switched mode power supplies.
Active power factor correction circuits.
Electronic lamp ballasts for half-bridge topologies.
DC-DC converters and inverters.

FQP6N50C FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the FQP6N50C?

500V.

What package does the FQP6N50C come in?

TO-220-3 through-hole package.

What is the operating temperature range of the FQP6N50C?

-55°C to 150°C (junction temperature).

Is the FQP6N50C RoHS compliant?

Rated as RoHS3 Compliant, but this is unverified.

What is the gate threshold voltage of the FQP6N50C?

Maximum 4V at Id=250µA, VDS=VGS.

What is the maximum drain-source on-resistance?

1.2Ω at Id=2.8A and Vgs=10V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	5.5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC (Typical), 25 nC (Max)
Input Capacitance (Ciss) (Max) @ Vds	700 pF
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	98 W
Rds On (Max) @ Id, Vgs	1.2 Ohm
Storage Temperature	-55.0°C ~ 150.0°C
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	4 V