| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,105 pcs
|
4105 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
429 pcs
|
429 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP6N40CF is a high-voltage N-Channel MOSFET designed for power switching applications. Manufactured by On Semiconductor, this device offers a maximum drain-source voltage of 400V and a continuous drain current of 6A at case temperature. Its on-resistance (Rds(on)) is specified at a maximum of 1.1Ω with a gate drive of 10V and Id=3A, ensuring efficient operation. The gate threshold voltage is up to 4V at 250µA, and the device can handle a maximum gate-source voltage of ±30V. With an input capacitance of 625pF at Vds=25V and a total gate charge of 20nC at Vgs=10V, the FQP6N40CF is suitable for moderate-frequency switching. The power dissipation is rated at 73W at case temperature. The device is housed in a standard TO-220-3 through-hole package, making it easy to mount on heatsinks. It operates over a junction temperature range of -55°C to 150°C. The FQP6N40CF is suitable for applications such as switch-mode power supplies, motor control, and general-purpose power switching where high voltage and moderate current are required.
400V.
TO-220-3.
-55°C to 150°C (junction temperature).
Yes, RoHS3 compliant (unverified).
6A at case temperature.
Maximum 1.1Ω at Id=3A, Vgs=10V.
Maximum 4V at Id=250µA.