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FQP65N06 The FQP65N06 is an N-Channel MOSFET from ON Semiconductor with a 60V drain-source voltage rating and 65A continuous drain current. It features a low on-resistance of 16mOhm and is housed in a through-hole TO-220-3 package.
Mfr Part #:

FQP65N06

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQP65N06 is an N-Channel MOSFET from ON Semiconductor with a 60V drain-source voltage rating and 65A continuous drain current. It features a low on-resistance of 16mOhm and is housed in a through-hole TO-220-3 package.
✓ Total Stock: 4,960 pcs

FQP65N06 Available from 2 distributors

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FQP65N06 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQP65N06 Description

Short technical summary and product information.

The FQP65N06 is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-efficiency switching applications and power management. With a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 65A, this device can handle medium-voltage, high-current loads. The maximum on-resistance (Rds(on)) is 16mOhm at a gate-source voltage of 10V and a drain current of 32.5A, ensuring low conduction losses.

 

The gate charge (Qg) is 65nC at 10V, and the input capacitance (Ciss) is 2410pF at 25V drain-source voltage, making it suitable for moderate-frequency switching. The threshold voltage (Vgs(th)) is 4V maximum, with a ±25V maximum gate-source voltage rating. The device can dissipate up to 150W of power, and operates over a junction temperature range of -55°C to 175°C.

 

This MOSFET is offered in a through-hole TO-220-3 package, which allows for easy mounting on heatsinks in power supply and motor control circuits. The device is RoHS3 compliant (unverified), MSL 1, and REACH unaffected.

FQP65N06 Quick Information

Product Type: N-Channel MOSFET
Series: QFET
Canonical Name: FQP65N06 N-Channel MOSFET
Subcategory: Single MOSFET

FQP65N06 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP65N06 Features

  • N-channel MOSFET with 60V drain-source voltage.
  • Continuous drain current rating of 65A.
  • Low on-resistance of 16mOhm at 10V gate drive.
  • Through-hole TO-220-3 package for easy mounting.
  • Wide operating temperature range from -55°C to 175°C.

FQP65N06 Applications

  • Power supply switching and regulation circuits.
  • DC-DC converters and inverters.
  • Motor control and drive applications.
  • Battery management and protection systems.

FQP65N06 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQP65N06?

The drain-source voltage (Vdss) is 60V.

What is the continuous drain current rating of the FQP65N06?

The continuous drain current (Id) is 65A.

What is the on-resistance of the FQP65N06?

The maximum on-resistance is 16mOhm at a drain current of 32.5A and gate-source voltage of 10V.

What is the package type of the FQP65N06?

The FQP65N06 is available in a through-hole TO-220-3 package.

What is the operating temperature range of the FQP65N06?

The operating junction temperature range is -55°C to 175°C.

Is the FQP65N06 RoHS compliant?

The component is listed as RoHS3 compliant, but this information is unverified.

What is the gate charge of the FQP65N06?

The maximum gate charge (Qg) is 65nC at a gate-source voltage of 10V.

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