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FQP5P20 P-Channel enhancement mode MOSFET with -200V drain-source voltage and -4.8A continuous drain current. Features low gate charge and fast switching.
Mfr Part #:

FQP5P20

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel enhancement mode MOSFET with -200V drain-source voltage and -4.8A continuous drain current. Features low gate charge and fast switching.
✓ Total Stock: 4,000 pcs

FQP5P20 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
4,000 pcs
On Request
4000 pcs On Request 1 On Request On Request On Request On Request On Request
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FQP5P20 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQP5P20 Description

Short technical summary and product information.

The FQP5P20 is a P-Channel enhancement mode power MOSFET manufactured using Fairchild Semiconductor's proprietary planar stripe DMOS technology. This device is designed to minimize on-state resistance while providing superior switching performance and high energy pulse handling capability in avalanche and commutation modes.

 

Key electrical specifications include a maximum drain-source voltage of -200V, continuous drain current of -4.8A at 25°C (derated to -3.04A at 100°C), and a maximum on-state resistance of 1.4 Ohm at Vgs = -10V and Id = -2.4A. The device features a low typical gate charge of 10 nC and low reverse transfer capacitance of 12 pF, enabling efficient high-frequency switching.

 

The FQP5P20 is housed in a standard TO-220-3 through-hole package, suitable for PCB mounting with heatsinking. It is rated for a maximum power dissipation of 75W at 25°C case temperature and operates over a junction temperature range of -55°C to +150°C. The device is 100% avalanche tested with a single pulsed avalanche energy rating of 330 mJ.

FQP5P20 Quick Information

Product Type: P-Channel MOSFET
Series: FQP5P20
Canonical Name: FQP5P20 P-Channel MOSFET, -200V, -4.8A, TO-220-3
Subcategory: Single MOSFET

FQP5P20 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP5P20 Features

  • P-Channel MOSFET with -200V drain-source voltage.
  • Continuous drain current rating of -4.8A at 25°C.
  • Low on-resistance of 1.4 Ohm maximum at -10V gate drive.
  • Low gate charge of 10 nC typical for fast switching.
  • 100% avalanche tested with 330 mJ single pulse energy.

FQP5P20 Applications

  • High efficiency switching DC/DC converters.
  • Power management in portable and industrial equipment.
  • Load switching and battery protection circuits.
  • Motor control and solenoid drive applications.

FQP5P20 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQP5P20?

The maximum drain-source voltage (Vdss) is -200V.

What is the continuous drain current rating?

The continuous drain current is -4.8A at 25°C case temperature, derated to -3.04A at 100°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds(on)) is 1.4 Ohm at Vgs = -10V and Id = -2.4A. Typical on-resistance is 1.1 Ohm.

What package is the FQP5P20 available in?

The FQP5P20 is available in a TO-220-3 through-hole package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the FQP5P20 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed with official documentation.

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