| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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The FQP5P10 is a P-Channel enhancement mode power MOSFET manufactured using Fairchild Semiconductor's proprietary planar stripe DMOS technology. It features a maximum drain-source voltage of -100V and a continuous drain current of -4.5 A at Tc=25°C. The on-resistance is typically 0.82Ω and a maximum of 1.05Ω at Vgs=-10V and Id=-2.25A.
This device is designed for low voltage applications including audio amplifiers, high efficiency switching DC/DC converters, and DC motor control. It offers low gate charge (typical 6.3nC) and low reverse transfer capacitance (Crss typical 18pF), contributing to fast switching performance. The MOSFET is 100% avalanche tested and has an improved dv/dt capability.
The FQP5P10 is housed in a TO-220-3 package, suitable for through-hole mounting. The junction temperature range is -55°C to +175°C. The thermal resistance junction-to-case is 3.75°C/W maximum.
-100 V maximum.
-4.5 A.
6.3 nC typical, 8.2 nC maximum at Vgs=10 V.