| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
80 pcs
|
80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
28 pcs
|
28 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP5N60C is an N-Channel MOSFET manufactured by ON Semiconductor. It features a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 4.5A at Tc. The device has a maximum on-resistance of 2.5 Ohms at 2.25A and 10V gate drive. Gate charge is 19 nC at 10V, and input capacitance is 670 pF at 25V Vds. The threshold voltage is 4V at 250 µA drain current. Maximum gate-source voltage is ±30V. Power dissipation is rated at 100W at Tc. The operating junction temperature range is -55°C to 150°C. The device is available in a TO-220-3 through-hole package, suitable for power switching and conversion applications.
600 V
TO-220-3 through-hole package
-55°C to 150°C (junction)
Reported as RoHS3 Compliant, but status is unverified.
Maximum 19 nC at 10 Vgs
Maximum 670 pF at 25 Vds
100W at case temperature