| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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109 pcs
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109 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The FQP5N50C is an N-Channel enhancement mode power MOSFET manufactured using Fairchild's proprietary QFET planar stripe DMOS technology. It is designed to minimize on-state resistance and provide superior switching performance with high energy pulse handling in avalanche and commutation modes.
Key electrical specifications include a drain-source voltage rating of 500V, continuous drain current of 5A at TC=25°C (20A pulsed), and a maximum on-resistance of 1.4 Ohm at VGS=10V and ID=2.5A. The device features a low gate charge of 24 nC max (typical 18 nC) and input capacitance of 625 pF, enabling fast switching. It is 100% avalanche tested with a single pulsed avalanche energy rating of 300 mJ and a peak diode recovery dv/dt of 4.5 V/ns.
The FQP5N50C is offered in a TO-220-3 through-hole package with a junction-to-case thermal resistance of 1.71 °C/W and an operating temperature range of -55°C to 150°C. It is well suited for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
500 V.
5 A at TC = 25°C.
Maximum 1.4 Ohm at VGS = 10V, ID = 2.5A.
-55°C to 150°C.
TO-220-3 through-hole package.
RoHS3 Compliant (unverified).
Maximum 24 nC at VGS = 10V (typical 18 nC).