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FQP5N40 The FQP5N40 is an N-Channel MOSFET from On Semiconductor with a 400V drain-source voltage rating and 4.5A continuous drain current. It is housed in a TO-220-3 through-hole package.
Mfr Part #:

FQP5N40

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQP5N40 is an N-Channel MOSFET from On Semiconductor with a 400V drain-source voltage rating and 4.5A continuous drain current. It is housed in a TO-220-3 through-hole package.
✓ Total Stock: 10,000 pcs

FQP5N40 Available from 1 distributor

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✓ Non-Authorised
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Components Technology Group, Inc. ✓
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10,000 pcs
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FQP5N40 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQP5N40 Description

Short technical summary and product information.

The FQP5N40 is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor using MOSFET (Metal Oxide) technology. It is designed for high-voltage switching applications requiring efficient power management.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 400V and a continuous drain current (Id) of 4.5A at Tc. The device features a maximum on-resistance (Rds(on)) of 1.6 Ohm at Vgs = 10V and Id = 2.25A, ensuring low conduction losses. The gate threshold voltage (Vgs(th)) is 5V maximum at Id = 250µA, and the maximum gate-to-source voltage (Vgs) is ±30V. The device has a maximum gate charge (Qg) of 13 nC at Vgs = 10V and a maximum input capacitance (Ciss) of 460 pF at Vds = 25V.

 

The FQP5N40 is rated for a maximum power dissipation of 70W at Tc and can operate over a junction temperature range of -55°C to 150°C. It is offered in a standard TO-220-3 through-hole package, making it suitable for a wide range of power conversion and switching circuits.

FQP5N40 Quick Information

Product Type: MOSFET
Canonical Name: FQP5N40 N-Channel MOSFET
Subcategory: Single N-Channel

FQP5N40 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP5N40 Features

  • N-Channel MOSFET with 400V drain-source voltage.
  • Continuous drain current rating of 4.5A.
  • Low on-resistance of 1.6 Ohm maximum.
  • Through-hole TO-220-3 package for easy mounting.
  • Operating temperature range from -55°C to 150°C.

FQP5N40 Applications

  • Used in high-voltage DC-DC converters.
  • Suitable for power supply switching circuits.
  • Ideal for motor control applications.
  • Applicable in lighting ballast designs.

FQP5N40 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQP5N40?

The maximum drain-source voltage (Vdss) is 400V.

What is the continuous drain current rating of the FQP5N40?

The continuous drain current (Id) is 4.5A at Tc.

What is the package type of the FQP5N40?

The FQP5N40 is available in a TO-220-3 through-hole package.

What is the operating temperature range of the FQP5N40?

The operating junction temperature range is -55°C to 150°C.

Is the FQP5N40 RoHS compliant?

The FQP5N40 is listed as RoHS3 Compliant, though this is unverified.

What is the maximum on-resistance of the FQP5N40?

The maximum on-resistance (Rds(on)) is 1.6 Ohm at Vgs = 10V and Id = 2.25A.

What is the gate threshold voltage of the FQP5N40?

The maximum gate threshold voltage (Vgs(th)) is 5V at Id = 250µA.

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