| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,562 pcs
|
9562 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,349 pcs
|
4349 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP55N10 is an N-Channel MOSFET from ON Semiconductor designed for a drain-source voltage of 100V and a continuous drain current of 55A. It achieves a maximum on-resistance of 26mOhm when driven at 10V gate-source voltage, enabling efficient power handling. The device has a gate charge of 98nC at 10V and an input capacitance of 2730pF at 25V, which influence switching speed and drive requirements.
With a maximum gate threshold voltage of 4V at 250µA and a maximum gate-source voltage of ±25V, the MOSFET offers flexibility in gate drive design. The recommended drive voltage for optimal Rds(on) is 10V. These characteristics make the part suitable for a variety of power management and switching applications such as DC-DC converters and motor drives.
The FQP55N10 is housed in a TO220-3 through-hole package, which facilitates easy mounting on printed circuit boards and attachment to heat sinks for thermal management. This package type is widely used in power electronics for its robust thermal performance and ease of assembly.
100V
TO220-3
55A at Tc
26mOhm at 27.5A, 10V
98nC at 10V
4V at 250µA
±25V