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FQP50N06L The FQP50N06L is an N-Channel MOSFET from On Semiconductor with a maximum drain-source voltage of 60V and continuous drain current of 52.4A. It comes in a TO-220-3 through-hole package.
Mfr Part #:

FQP50N06L

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQP50N06L is an N-Channel MOSFET from On Semiconductor with a maximum drain-source voltage of 60V and continuous drain current of 52.4A. It comes in a TO-220-3 through-hole package.
✓ Total Stock: 12,460 pcs

FQP50N06L Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
12,000 pcs
On Request
12000 pcs On Request 1 On Request On Request On Request On Request On Request
Fe Components ✓
Non-Authorised Inventory information
460 pcs
On Request
460 pcs On Request 1 On Request On Request On Request On Request On Request
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FQP50N06L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQP50N06L Description

Short technical summary and product information.

The FQP50N06L is an N-Channel MOSFET manufactured by On Semiconductor. It features a maximum drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 52.4A at case temperature. The device utilizes MOSFET (Metal Oxide) technology.

 

Key electrical characteristics include a maximum on-resistance (Rds(on)) of 21 mOhm at Vgs=10V and Id=26.2A, a maximum gate charge (Qg) of 32 nC at Vgs=5V, and a maximum input capacitance (Ciss) of 1630 pF at Vds=25V. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at Id=250µA, and the maximum gate-source voltage is ±20V. The drive voltage range is 5V to 10V.

 

The device is designed for through-hole mounting in a TO-220-3 package. It can dissipate up to 121W at case temperature and operates over a junction temperature range of -55°C to 175°C. These specifications make it suitable for power switching and amplification applications.

FQP50N06L Quick Information

Product Type: MOSFET
Canonical Name: FQP50N06L N-Channel MOSFET
Subcategory: N-Channel MOSFET

FQP50N06L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP50N06L Features

  • N-Channel MOSFET with 60V drain-source voltage.
  • Continuous drain current rating of 52.4A.
  • Low on-resistance of 21 mOhm at 10V.
  • Through-hole TO-220-3 package for easy mounting.
  • Wide operating temperature range -55°C to 175°C.

FQP50N06L Applications

  • Power supply and DC-DC converter circuits.
  • Motor control and driver applications.
  • Load switching and power management systems.
  • Battery protection and charging circuits.

FQP50N06L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQP50N06L?

60V.

What is the continuous drain current rating?

52.4A at case temperature.

What is the on-resistance of this MOSFET?

21 mOhm maximum at Vgs=10V and Id=26.2A.

What package does the FQP50N06L come in?

TO-220-3 through-hole package.

What is the operating temperature range?

-55°C to 175°C (junction temperature).

Is the FQP50N06L RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the gate threshold voltage?

Maximum 2.5V at Id=250µA.

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