| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
41,000 pcs
|
41000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
12,840 pcs
|
12840 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,121 pcs
|
3121 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,230 pcs
|
1230 pcs | On Request | 1 | On Request | On Request | 1726+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP4N90C is an N-Channel enhancement mode MOSFET manufactured using MOSFET (Metal Oxide) technology. It is designed for high-voltage switching applications requiring efficient power management.
Key electrical specifications include a drain-to-source voltage (Vdss) of 900V, a continuous drain current of 4A at case temperature (Tc), and a maximum on-resistance (Rds on) of 4.2 Ohms at a gate drive of 10V and 2A drain current. The device features a maximum gate charge of 22 nC at 10V and an input capacitance of 960 pF at 25V drain-source voltage. The gate threshold voltage is a maximum of 5V at 250 µA drain current, and the maximum gate-source voltage is ±30V.
The device is housed in a standard TO-220-3 package with through-hole mounting, suitable for easy integration into power circuits. It can dissipate up to 140W of power and operates over a junction temperature range of -55°C to 150°C.
The maximum drain-source voltage (Vdss) is 900V.
The continuous drain current is 4A at case temperature (Tc).
The maximum on-resistance (Rds on) is 4.2 Ohms at a gate-source voltage of 10V and drain current of 2A.
It comes in a TO-220-3 package with through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
The maximum power dissipation is 140W at case temperature (Tc).
The maximum gate threshold voltage (Vgs(th)) is 5V at a drain current of 250 µA.