| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP4N90 is an N-Channel enhancement mode power MOSFET manufactured using planar stripe DMOS technology. It features a drain-source breakdown voltage of 900V and a continuous drain current of 4.2A at 25°C, with a pulsed drain current rating of 16.8A. The device offers a maximum on-resistance of 3.3Ω at a gate-source voltage of 10V and a drain current of 2.1A.
This MOSFET is designed for high-efficiency switch mode power supplies, providing low gate charge (typically 24nC) and fast switching performance. It is 100% avalanche tested and offers improved dv/dt capability, with a single pulsed avalanche energy rating of 570mJ. The device operates over a junction temperature range of -55°C to 150°C and can dissipate up to 140W at a case temperature of 25°C.
The FQP4N90 is available in a TO-220-3 package with through-hole mounting, making it suitable for power applications requiring robust thermal performance. The junction-to-case thermal resistance is 0.89°C/W, and the maximum lead temperature for soldering is 300°C for 5 seconds.
The drain-source breakdown voltage is 900V (minimum, at ID=250µA).
The maximum continuous drain current is 4.2A at TC=25°C and 2.65A at TC=100°C.
The static drain-source on-resistance is 2.7Ω typical and 3.3Ω maximum at VGS=10V and ID=2.1A.
The operating junction temperature range is -55°C to 150°C.
The FQP4N90 is available in a TO-220-3 package with through-hole mounting.
The maximum power dissipation is 140W at TC=25°C, derating at 1.12W/°C above 25°C.
The gate threshold voltage ranges from 3.0V to 5.0V at VDS=VGS and ID=250µA.