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FQP4N80 FQP4N80 is an N-Channel MOSFET from ON Semiconductor with 800V drain-source voltage and 3.9A continuous drain current. It comes in a TO-220-3 through-hole package.
Mfr Part #:

FQP4N80

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQP4N80 is an N-Channel MOSFET from ON Semiconductor with 800V drain-source voltage and 3.9A continuous drain current. It comes in a TO-220-3 through-hole package.
✓ Total Stock: 18,020 pcs

FQP4N80 Available from 1 distributor

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Optech Co.,Limited ✓
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18,020 pcs
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FQP4N80 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQP4N80 Description

Short technical summary and product information.

The FQP4N80 is an N-Channel MOSFET manufactured by ON Semiconductor (formerly Fairchild Semiconductor). It features a drain-to-source voltage (Vdss) of 800V and a maximum continuous drain current of 3.9A at case temperature (Tc). The device uses MOSFET (Metal Oxide) technology and requires a gate drive voltage of 10V for optimal Rds(on) performance.

 

The maximum on-resistance (Rds(on)) is 3.6 Ohms at Id=1.95A and Vgs=10V. The gate threshold voltage (Vgs(th)) is a maximum of 5V at Id=250µA. The maximum gate-source voltage is ±30V. Input capacitance (Ciss) is 880 pF at Vds=25V, and total gate charge (Qg) is 25 nC at Vgs=10V.

 

The device is designed for through-hole mounting in a TO-220-3 package. It can dissipate up to 130W (Tc) and operates over a junction temperature range of -55°C to 150°C. These specifications make it suitable for high-voltage switching applications such as power supplies, inverters, and motor control circuits.

FQP4N80 Quick Information

Product Type: MOSFET
Canonical Name: FQP4N80 N-Channel MOSFET
Subcategory: N-Channel MOSFET

FQP4N80 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP4N80 Features

  • N-Channel MOSFET with 800V drain-source voltage.
  • Maximum continuous drain current of 3.9A.
  • Low on-resistance of 3.6 Ohms at 10V gate drive.
  • Through-hole mounting in TO-220-3 package.
  • Operating temperature range from -55°C to 150°C.

FQP4N80 Applications

  • Used in switch-mode power supplies.
  • Ideal for high-voltage DC-DC converters.
  • Suitable for motor control circuits.
  • Applicable in inverter and UPS systems.

FQP4N80 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQP4N80?

800V.

What is the maximum drain current?

3.9A at case temperature (Tc).

What is the on-resistance?

3.6 Ohms maximum at Id=1.95A, Vgs=10V.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package does the FQP4N80 come in?

TO-220-3 through-hole package.

Is the FQP4N80 RoHS compliant?

It is listed as RoHS3 compliant, but this is unverified.

What is the gate threshold voltage?

Maximum 5V at Id=250µA.

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