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FQP4N20L N-Channel MOSFET rated for 200V drain-source voltage and 3.8A continuous drain current. Features low on-resistance of 1.35Ohm at 10V gate drive.
Mfr Part #:

FQP4N20L

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 200V drain-source voltage and 3.8A continuous drain current. Features low on-resistance of 1.35Ohm at 10V gate drive.
✓ Total Stock: 4,050 pcs

FQP4N20L Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
4,000 pcs
On Request
4000 pcs On Request 1 On Request On Request 1141+ On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
50 pcs
On Request
50 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQP4N20L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQP4N20L Description

Short technical summary and product information.

The FQP4N20L is an N-Channel enhancement-mode MOSFET from onsemi, designed for medium-voltage switching applications. It features a drain-source voltage rating of 200V and continuous drain current of 3.8A at case temperature.

 

Key electrical characteristics include a maximum on-resistance of 1.35Ohm at Vgs=10V and Id=1.9A, gate charge of 5.2nC at Vgs=5V, and input capacitance of 310pF at Vds=25V. The device is driven with gate voltages of 5V or 10V for optimal Rds(on).

 

The MOSFET is housed in a through-hole TO-220-3 package, suitable for PCB mounting with adequate heat sinking. Maximum power dissipation is 45W at case temperature, and operating junction temperature range is -55°C to 150°C.

FQP4N20L Quick Information

Product Type: N-Channel MOSFET
Canonical Name: On Semiconductor FQP4N20L N-Channel MOSFET
Subcategory: N-Channel MOSFET

FQP4N20L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP4N20L Features

  • N-Channel MOSFET with 200V drain-source voltage.
  • Continuous drain current rating of 3.8A.
  • Low on-resistance of 1.35Ohm at 10V gate drive.
  • Through-hole TO-220-3 package for easy mounting.
  • Wide operating temperature range from -55°C to 150°C.

FQP4N20L Applications

  • Suitable for DC-DC converter circuits.
  • Used in motor control and power management.
  • Ideal for switching power supplies.
  • Applicable in load switching and relay drivers.

FQP4N20L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the FQP4N20L?

-55°C to 150°C (junction).

What package does the FQP4N20L come in?

TO-220-3 (through-hole).

Is the FQP4N20L RoHS compliant?

Yes, RoHS3 compliant (status unverified).

What is the drain-source voltage rating?

200V.

What is the continuous drain current?

3.8A at case temperature.

What is the on-resistance of the FQP4N20L?

1.35Ohm maximum at Id=1.9A, Vgs=10V.

What is the gate charge?

5.2nC maximum at Vgs=5V.

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