| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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44,610 pcs
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44610 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,898 pcs
|
6898 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP46N15 is an N-Channel MOSFET from ON Semiconductor designed for switching applications. It features a maximum drain-source voltage (Vdss) of 150V, making it suitable for circuits requiring moderate voltage handling. The device has a maximum gate charge of 110 nC at 10V Vgs and an input capacitance of 3250 pF at 25V Vds, which characterize its switching performance. The gate threshold voltage is 4V maximum at 250 µA drain current.
The MOSFET is housed in a through-hole TO-220-3 package, allowing for straightforward PCB mounting and efficient heat sinking when attached to a heatsink. It operates over a junction temperature range of -55°C to 175°C, accommodating a variety of environmental conditions.
Typical applications include power management, DC-DC converters, and motor control circuits where the 150V breakdown voltage and moderate gate drive requirements are advantageous. The part is RoHS3 compliant and REACH unaffected, though these compliance claims have not been independently verified from the original datasheet.
TO-220-3 through-hole package.
-55°C to 175°C junction temperature.
Yes, RoHS3 compliant.
N-Channel MOSFET.
150 V maximum.
110 nC at 10 V.
4 V maximum at 250 µA drain current.