| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,050 pcs
|
2050 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
197 pcs
|
197 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP45N15V2 is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-efficiency power switching applications requiring up to 150V drain-source voltage and 45A continuous drain current.
With a maximum on-resistance of 40mOhm at 22.5A and 10V gate drive, this device offers low conduction losses. The gate threshold voltage is 4V maximum at 250µA, and the gate charge is 94nC at 10V, enabling fast switching. Input capacitance is 3030pF at 25V Vds.
The MOSFET is packaged in a standard TO-220-3 through-hole package, suitable for easy mounting on heatsinks. It has a maximum power dissipation of 220W at case temperature, and operates over a junction temperature range of -55°C to 150°C.
This device is suitable for use in power supplies, motor drives, and DC-DC converters where high voltage and current handling are required. The ±30V maximum gate-source voltage provides robustness against overdrive.
The FQP45N15V2 has a maximum drain-source voltage (Vdss) of 150V.
It is available in a TO-220-3 through-hole package.
The junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified.
45A at case temperature.
Maximum 40mOhm at 22.5A and 10V gate drive.
Maximum 4V at 250µA drain current.