FQP3P50 FQP3P50 is a P-Channel MOSFET from On Semiconductor with 500V drain-source voltage rating and 2.7A continuous drain current. It features a 4.9Ohm on-resistance and is housed in a TO-220-3 through-hole package.
Mfr Part #:

FQP3P50

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQP3P50 is a P-Channel MOSFET from On Semiconductor with 500V drain-source voltage rating and 2.7A continuous drain current. It features a 4.9Ohm on-resistance and is housed in a TO-220-3 through-hole package.
✓ Total Stock: 10,679 pcs

FQP3P50 Available from 4 distributors

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FQP3P50 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQP3P50 Description

Short technical summary and product information.

The FQP3P50 is a P-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for high-voltage switching applications with a drain-source voltage rating of 500V and a continuous drain current of 2.7A (at case temperature). The maximum on-resistance is 4.9Ohm at a gate drive of 10V and 1.35A drain current.

 

Electrical characteristics include a gate threshold voltage of 5V maximum at 250µA, a maximum gate charge of 23nC at 10V, and an input capacitance of 660pF at 25V drain-source voltage. The device is capable of dissipating up to 85W at case temperature. The recommended gate drive voltage for achieving minimum on-resistance is 10V, with a maximum gate-source voltage rating of ±30V.

 

The FQP3P50 is packaged in a TO-220-3 through-hole package, suitable for board-level mounting. It operates over a junction temperature range of -55°C to 150°C. This MOSFET is suitable for use in power supplies, inverters, and other high-voltage power management circuits.

FQP3P50 Quick Information

Product Type: MOSFET
Series: FQP3P50
Canonical Name: FQP3P50 P-Channel MOSFET, 500V, 2.7A, TO-220-3
Subcategory: Single MOSFET

FQP3P50 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP3P50 Features

  • P-Channel MOSFET for high-voltage switching.
  • 500V drain-source voltage rating.
  • 2.7A continuous drain current capability.
  • 4.9Ohm maximum on-resistance.
  • TO-220-3 through-hole package.

FQP3P50 Applications

  • Ideal for high-voltage power supply circuits.
  • Used in switching regulator applications.
  • Suitable for motor control inverters.
  • Applicable in battery management systems.

FQP3P50 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQP3P50?

The FQP3P50 has a drain-source voltage rating of 500V.

What is the package type of the FQP3P50?

The FQP3P50 is available in a TO-220-3 through-hole package.

What is the operating temperature range of the FQP3P50?

The operating temperature range is -55°C to 150°C (junction temperature).

Is the FQP3P50 RoHS compliant?

The FQP3P50 is listed as RoHS compliant (RoHS3), but this status is unverified from the datasheet.

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