| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,120 pcs
|
4120 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request | |
|
2,935 pcs
|
2935 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
1,124 pcs
|
1124 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The FQP3P50 is a P-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for high-voltage switching applications with a drain-source voltage rating of 500V and a continuous drain current of 2.7A (at case temperature). The maximum on-resistance is 4.9Ohm at a gate drive of 10V and 1.35A drain current.
Electrical characteristics include a gate threshold voltage of 5V maximum at 250µA, a maximum gate charge of 23nC at 10V, and an input capacitance of 660pF at 25V drain-source voltage. The device is capable of dissipating up to 85W at case temperature. The recommended gate drive voltage for achieving minimum on-resistance is 10V, with a maximum gate-source voltage rating of ±30V.
The FQP3P50 is packaged in a TO-220-3 through-hole package, suitable for board-level mounting. It operates over a junction temperature range of -55°C to 150°C. This MOSFET is suitable for use in power supplies, inverters, and other high-voltage power management circuits.
The FQP3P50 has a drain-source voltage rating of 500V.
The FQP3P50 is available in a TO-220-3 through-hole package.
The operating temperature range is -55°C to 150°C (junction temperature).
The FQP3P50 is listed as RoHS compliant (RoHS3), but this status is unverified from the datasheet.