| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
849 pcs
|
849 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP3P20 is a P-Channel enhancement mode MOSFET manufactured by ON Semiconductor. It features a drain-source voltage (Vdss) of 200V and a continuous drain current of 2.8A at Tc. The device has a maximum on-resistance of 2.7 Ohms at Vgs=10V and Id=1.4A. The gate threshold voltage is 5V maximum at Id=250µA. With a maximum gate charge of 8 nC at Vgs=10V and input capacitance of 250 pF at Vds=25V, this MOSFET is suitable for moderate speed switching applications. The maximum power dissipation is 52W at Tc. The device is housed in a TO-220-3 through-hole package, suitable for PCB mounting. The operating junction temperature range is -55°C to 150°C. This MOSFET is RoHS3 compliant and REACH unaffected, though compliance is unverified. It is commonly used in power management and switching circuits where a P-Channel device is required.
200V.
TO-220-3 through-hole package.
-55°C to 150°C (junction).
RoHS3 compliant (unverified).
2.8A at Tc.
5V maximum at Id=250µA.
2.7 Ohms maximum at Vgs=10V, Id=1.4A.