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FQP3N80C

FQP3N80C is an N-Channel MOSFET from On Semiconductor, rated for 800V drain-source voltage and 3A continuous drain current. It features a low on-resistance of 4.8 Ohm and is packaged in a TO-220-3 through-hole package.

✓ Total Stock: 1,242 pcs

FQP3N80C Available from 3 distributors

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	122 pcs On Request	122 pcs	On Request	1	On Request	On Request	1107+	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	120 pcs On Request	120 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FQP3N80C Description

Short technical summary and product information.

The FQP3N80C is an N-Channel enhancement mode power MOSFET produced using onsemi's proprietary planar stripe and DMOS technology. This advanced MOSFET technology reduces on-state resistance and provides superior switching performance and high avalanche energy strength.

Electrical specifications include a maximum drain-source voltage of 800V, continuous drain current of 3A at Tc=25°C (1.9A at Tc=100°C), and a maximum on-resistance of 4.8 Ohm at Vgs=10V and Id=1.5A. The gate charge is 16.5 nC maximum at Vgs=10V, and input capacitance is 705 pF maximum at Vds=25V. The device is 100% avalanche tested.

Packaged in a TO-220-3 through-hole case, the FQP3N80C is designed for through-hole mounting and operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 107W at Tc=25°C.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

FQP3N80C Quick Information

Product Type: MOSFET

Series: QFET

Canonical Name: FQP3N80C - On Semiconductor - MOSFET N-Channel 800V 3A

Subcategory: N-Channel MOSFET

FQP3N80C Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FQP3N80C Features

N-Channel enhancement mode MOSFET.
800V drain-source voltage rating.
3A continuous drain current at 25°C.
Low on-resistance of 4.8 Ohm.
TO-220-3 through-hole package.

FQP3N80C Applications

Used in switched mode power supplies.
Active power factor correction circuits.
Electronic lamp ballasts.
High-voltage switching applications.

FQP3N80C FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage (Vdss) of the FQP3N80C?

800V.

What is the continuous drain current rating?

3A at Tc=25°C, 1.9A at Tc=100°C.

What is the on-resistance (Rds(on))?

4.8 Ohm maximum at Vgs=10V, Id=1.5A.

What is the operating temperature range?

-55°C to 150°C (junction).

What package is the FQP3N80C available in?

TO-220-3 through-hole package.

Is the FQP3N80C RoHS compliant?

RoHS3 compliant, but this status is unverified.

What is the gate threshold voltage (Vgs(th))?

5V maximum at Id=250µA.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	3A (Tc)
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16.5 nC
Input Capacitance (Ciss) (Max) @ Vds	705 pF
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	107 W
Rds On (Max) @ Id, Vgs	4.8 Ohm
Storage Temperature	-55.0°C ~ 150.0°C
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	5 V