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FQP3N60C The FQP3N60C is an N-Channel enhancement-mode power MOSFET from ON Semiconductor, rated at 600V drain-source voltage and 3A continuous drain current. Housed in a TO-220-3 through-hole package, it features a maximum on-resistance of 3.4Ω at VGS=10V.
Mfr Part #:

FQP3N60C

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQP3N60C is an N-Channel enhancement-mode power MOSFET from ON Semiconductor, rated at 600V drain-source voltage and 3A continuous drain current. Housed in a TO-220-3 through-hole package, it features a maximum on-resistance of 3.4Ω at VGS=10V.
✓ Total Stock: 212 pcs

FQP3N60C Available from 1 distributor

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FQP3N60C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQP3N60C Description

Short technical summary and product information.

The FQP3N60C is an N-Channel enhancement mode power MOSFET from ON Semiconductor, built using the company’s proprietary planar stripe and DMOS technology. It is designed for high-voltage switching applications and offers a drain-to-source voltage rating of 600 V, a continuous drain current of 3 A (at TC=25°C), and pulsed drain current capability up to 12 A. The device features a maximum on-resistance of 3.4 Ω at VGS=10 V and ID=1.5 A, with a maximum gate charge of 14 nC at VGS=10 V.

 

Key electrical ratings include a maximum power dissipation of 75 W at TC=25°C, a gate-source voltage range of ±30 V, and an operating junction temperature range of -55°C to 150°C. Input capacitance is specified at a maximum of 565 pF at VDS=25 V, and single pulse avalanche energy is rated up to 150 mJ.

 

The MOSFET is available in a TO-220-3 through-hole package, making it suitable for power conversion circuits, switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Its low gate charge and 100% avalanche tested rating support reliable switching performance.

 

The device is Pb-free. Maximum thermal resistance from junction to case is 1.67°C/W and from junction to ambient is 62.5°C/W, which should be considered when designing thermal management.

FQP3N60C Quick Information

Product Type: Power MOSFET
Canonical Name: N-Channel 600V 3A MOSFET (TO-220-3)
Subcategory: N-Channel MOSFET

FQP3N60C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FQP3N60C Features

  • Rated for 600V drain-source voltage.
  • Supports 3A continuous drain current.
  • 3.4Ω maximum on-resistance at VGS=10V.
  • Available in TO-220-3 through-hole package.
  • 100% avalanche tested and lead-free.

FQP3N60C Applications

  • Usable in switched mode power supplies.
  • Supports active power factor correction circuits.
  • Suitable for electronic lamp ballasts.
  • Designed for high-voltage switching loads.

FQP3N60C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage rating of the FQP3N60C?

600 V.

What package is the FQP3N60C available in?

TO-220-3 through-hole package.

What is the operating junction temperature range?

-55°C to +150°C.

Is the FQP3N60C RoHS compliant?

Yes, it is listed as RoHS3 compliant (Pb-free) in the source database; however, this has not been independently verified.

What is the maximum continuous drain current at TC=25°C?

3 A.

What is the maximum on-resistance of the FQP3N60C?

3.4 Ω at VGS=10V and ID=1.5A.

What is the maximum power dissipation of this MOSFET?

75 W at TC=25°C.

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