| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQP3N60 is an N-Channel enhancement mode power MOSFET manufactured using Fairchild's planar stripe DMOS technology. It is designed for high efficiency switch mode power supplies.
Key electrical specifications include a drain-source voltage of 600V, continuous drain current of 3.0A at 25°C (1.9A at 100°C), and pulsed drain current of 12A. On-resistance is 3.6 Ohm maximum at Vgs=10V. Low gate charge (typical 10nC) and low reverse transfer capacitance (typical 5.5pF) enable fast switching. The device is 100% avalanche tested with a single pulsed avalanche energy rating of 200mJ.
The MOSFET is housed in a through-hole TO-220-3 package. Maximum power dissipation is 75W at case temperature 25°C. Thermal resistance from junction to case is 1.67°C/W, and junction to ambient is 62.5°C/W. Operating temperature range is -55°C to 150°C.
Typical applications include high efficiency switch mode power supplies, power factor correction circuits, and other power conversion systems requiring high voltage and fast switching performance.
The maximum drain-source voltage (Vdss) is 600V.
Continuous drain current is 3.0A at Tc=25°C and 1.9A at Tc=100°C.
Maximum on-resistance is 3.6 Ohm at Vgs=10V and Id=1.5A.
The FQP3N60 is available in a TO-220-3 through-hole package.
The operating temperature range is -55°C to 150°C.
It is listed as RoHS3 Compliant, but this status is unverified.
The maximum gate threshold voltage is 5V at Id=250µA, with a minimum of 3.0V.