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FQP3N50C-F080 N-Channel MOSFET with 500V drain-source breakdown voltage and 1.8A continuous drain current. Housed in a through-hole TO-220-3 package.
Mfr Part #:

FQP3N50C-F080

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 500V drain-source breakdown voltage and 1.8A continuous drain current. Housed in a through-hole TO-220-3 package.
✓ Total Stock: 8,000 pcs

FQP3N50C-F080 Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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8,000 pcs
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8000 pcs On Request 1 On Request On Request On Request On Request On Request
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FQP3N50C-F080 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQP3N50C-F080 Description

Short technical summary and product information.

The FQP3N50C-F080 is an N-Channel power MOSFET from On Semiconductor, designed for high-voltage switching applications. It features a drain-source breakdown voltage of 500V and a maximum continuous drain current of 1.8A at case temperature. The device offers a maximum on-resistance of 2.5 Ohms at a gate drive of 10V and 1.5A drain current.

 

This MOSFET uses standard gate drive voltage of 10V and has a maximum gate threshold voltage of 4V at 250µA drain current. It provides a gate charge of 13 nC at 10V and an input capacitance of 365 pF at 25V drain-source voltage, enabling efficient switching performance. The device can dissipate up to 62W at case temperature.

 

The FQP3N50C-F080 is packaged in a through-hole TO-220-3 case, suitable for mounting on printed circuit boards. It operates over a junction temperature range of -55°C to 150°C. The part is suitable for various power conversion and control circuits requiring high voltage capability.

FQP3N50C-F080 Quick Information

Product Type: MOSFET
Canonical Name: FQP3N50C-F080 N-Channel MOSFET
Subcategory: N-Channel Power MOSFET

FQP3N50C-F080 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP3N50C-F080 Features

  • N-Channel MOSFET with 500V drain-source voltage.
  • 1.8A continuous drain current at case temperature.
  • 2.5 Ohm maximum on-resistance at 10V gate drive.
  • Through-hole TO-220-3 package for easy mounting.
  • Operates from -55°C to 150°C junction temperature.

FQP3N50C-F080 Applications

  • High-voltage power switching circuits.
  • DC-DC converter and inverter designs.
  • Power supply and motor control systems.
  • General purpose switching applications.

FQP3N50C-F080 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQP3N50C-F080?

The maximum drain-source breakdown voltage is 500V.

What is the maximum continuous drain current?

The maximum continuous drain current is 1.8A at case temperature.

What is the on-resistance of this MOSFET?

The maximum drain-source on-resistance is 2.5 Ohms at a gate voltage of 10V and drain current of 1.5A.

What package does the FQP3N50C-F080 come in?

It comes in a through-hole TO-220-3 package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FQP3N50C-F080 RoHS compliant?

The part is listed as RoHS3 compliant, but this information is unverified.

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