| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,581 pcs
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1581 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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550 pcs
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550 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP33N10 is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for high-efficiency power switching applications requiring a drain-source voltage rating of 100V and a continuous drain current of 33A at case temperature. The device features a maximum drain-source on-resistance of 52mOhm at a gate drive of 10V and a drain current of 16.5A, enabling low conduction losses in power conversion circuits.
Key electrical characteristics include a maximum gate charge of 51nC at 10V gate-source voltage, which supports fast switching performance, and an input capacitance of 1500pF at 25V drain-source voltage. The gate threshold voltage is specified at a maximum of 4V at 250µA drain current, and the device can handle a maximum gate-source voltage of ±25V. With a maximum power dissipation of 127W at case temperature and an operating junction temperature range of -55°C to 175°C, the FQP33N10 is suitable for demanding thermal environments.
The device is housed in a TO-220-3 through-hole package, which provides excellent thermal performance and ease of mounting on printed circuit boards. This package is widely used in power supply, motor control, and other industrial applications where reliable heat dissipation is critical. The FQP33N10 is a versatile component for designers seeking a robust N-Channel MOSFET with balanced voltage, current, and on-resistance characteristics.
The maximum drain-source voltage is 100V.
The continuous drain current is 33A at case temperature (Tc).
The maximum drain-source on-resistance is 52mOhm at 16.5A drain current and 10V gate-source voltage.
The junction temperature range is -55°C to 175°C.
The FQP33N10 comes in a TO-220-3 through-hole package.
The maximum gate threshold voltage is 4V at 250µA drain current.
The maximum power dissipation is 127W at case temperature (Tc).