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FQP32N20C FQP32N20C is an N-Channel MOSFET from On Semiconductor with 200V drain-source voltage and 28A continuous drain current. Housed in a through-hole TO-220-3 package.
Mfr Part #:

FQP32N20C

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQP32N20C is an N-Channel MOSFET from On Semiconductor with 200V drain-source voltage and 28A continuous drain current. Housed in a through-hole TO-220-3 package.
✓ Total Stock: 1,954 pcs

FQP32N20C Available from 1 distributor

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FQP32N20C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQP32N20C Description

Short technical summary and product information.

The FQP32N20C is an N-Channel enhancement-mode power MOSFET manufactured by ON Semiconductor. It features a drain-to-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 28 A at 25°C case temperature. The device offers a maximum on-resistance (Rds(on)) of 82 mOhm at Vgs = 10 V and Id = 14 A, ensuring efficient power switching.

 

This MOSFET is designed for through-hole mounting in a standard TO-220-3 package, making it suitable for a wide range of power conversion and switching applications. The gate threshold voltage (Vgs(th)) is a maximum of 4 V at Id = 250 µA, and the maximum gate-source voltage is ±30 V. The device can dissipate up to 156 W at Tc = 25°C and operates over a junction temperature range of -55°C to 150°C.

 

With a maximum gate charge (Qg) of 110 nC at Vgs = 10 V and an input capacitance (Ciss) of 2200 pF at Vds = 25 V, the FQP32N20C is suitable for moderate-frequency switching applications. The part is listed as RoHS3 compliant and REACH unaffected, though these compliance claims are unverified.

FQP32N20C Quick Information

Product Type: MOSFET
Canonical Name: FQP32N20C N-Channel MOSFET
Subcategory: N-Channel Power MOSFET

FQP32N20C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP32N20C Features

  • N-Channel MOSFET with 200V drain-source voltage.
  • Continuous drain current rated at 28A.
  • Low on-resistance of 82 mOhm maximum.
  • Through-hole TO-220-3 package for easy mounting.
  • Wide operating junction temperature range -55°C to 150°C.

FQP32N20C Applications

  • Used in power supply switching circuits.
  • Suitable for DC-DC converter designs.
  • Ideal for motor control applications.
  • Applicable in inverter and UPS systems.

FQP32N20C FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQP32N20C?

The maximum drain-source voltage (Vdss) is 200 V.

What is the continuous drain current rating?

The continuous drain current (Id) is 28 A at Tc = 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds(on)) is 82 mOhm at Vgs = 10 V and Id = 14 A.

What package does the FQP32N20C come in?

It comes in a through-hole TO-220-3 package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FQP32N20C RoHS compliant?

The part is listed as RoHS3 compliant, but this information is unverified.

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