| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,370 pcs
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4370 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQP30N06L is an N-Channel enhancement-mode power MOSFET manufactured by ON Semiconductor. It is designed for high-efficiency power management applications requiring a 60V drain-source breakdown voltage and a continuous drain current of 32A.
Key electrical characteristics include a maximum on-resistance of 35mOhm at 16A and 10V gate drive, a gate threshold voltage of 2.5V at 250µA, and a maximum gate charge of 20nC at 5V. The device is capable of dissipating up to 79W of power and operates over a junction temperature range of -55°C to 175°C.
The FQP30N06L is housed in a standard TO-220-3 through-hole package, making it suitable for a wide range of power conversion and switching circuits. Its low gate charge and input capacitance (1040pF at 25V) enable efficient switching at moderate frequencies.
The maximum drain-source voltage (Vdss) is 60V.
The continuous drain current is 32A at the case temperature (Tc).
The maximum on-resistance is 35mOhm at a drain current of 16A and gate-source voltage of 10V.
The FQP30N06L is available in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 175°C.
Yes, the FQP30N06L is listed as RoHS3 compliant, though this is unverified from a manufacturer document.