| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQP30N06 is an N-Channel enhancement mode power field-effect transistor utilizing Fairchild's proprietary planar stripe, DMOS technology. This advanced technology minimizes on-state resistance and provides superior switching performance, making it suitable for high energy pulse withstand in avalanche and commutation modes.
Key electrical specifications include a Drain-Source Voltage (VDSS) of 60V, a continuous Drain Current (ID) of 30A at 25°C, and a maximum Static Drain-Source On-Resistance (RDS(on)) of 0.04 Ohms at VGS = 10V. It also boasts a low gate charge of typically 19 nC and a low Crss of typically 40 pF, contributing to its fast switching capabilities.
This MOSFET is well-suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery-operated products. The device is packaged in a TO-220 package and is designed for through-hole mounting.
Absolute maximum ratings include a maximum junction temperature of 175°C and a storage temperature range of -55 to +175°C. Thermal characteristics include a Junction-to-Case thermal resistance (RθJC) of 1.90 °C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current for the FQP30N06 is 30A at 25°C.
The drain-source breakdown voltage (BVDSS) of the FQP30N06 is 60V.
The typical static drain-source on-resistance (RDS(on)) for the FQP30N06 is 0.031 Ohms at VGS = 10V and ID = 15A.
The operating and storage temperature range for the FQP30N06 is -55 to +175°C.
The FQP30N06 is available in a TO-220 package.