| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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443 pcs
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443 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQP30N06 from TELMIL is an N-Channel enhancement mode power MOSFET utilizing advanced DMOS technology. This device is engineered to minimize on-state resistance and provide superior switching performance, making it suitable for demanding applications.
Key electrical specifications include a drain-source breakdown voltage of 60V and a continuous drain current rating of 30A at 25°C. The static drain-source on-resistance is as low as 0.04 Ohms at a gate-source voltage of 10V. It also features a low gate charge of typically 19 nC and a low Crss of typically 40 pF, contributing to its fast switching capabilities.
With a maximum junction temperature rating of 175°C and a power dissipation of 79W at 25°C, the FQP30N06 is designed for robust operation. The TO-220 package with through-hole mounting is standard for this component.
This MOSFET is well-suited for low-voltage applications such as automotive systems, DC/DC converters, and high-efficiency power management in portable and battery-operated products.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FQP30N06 is housed in a TO-220 package.
The maximum drain-source breakdown voltage (BVDSS) is 60V.
The continuous drain current at 25°C is 30A.
The maximum gate-source voltage is ±25V.
The maximum power dissipation is 79W.