| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,275 pcs
|
2275 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP30N06 is an N-Channel enhancement mode MOSFET designed and manufactured by On Semiconductor. It is housed in a standard TO-220-3 through-hole package, suitable for a wide range of power switching applications. With a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 30A at case temperature Tc, it can handle moderate power levels. The device features a low on-resistance of 40 mΩ maximum at 15A drain current and 10V gate-source voltage, which reduces conduction losses. The gate threshold voltage is typically 4V at 250µA, and the maximum gate charge is 25 nC at 10V, facilitating fast switching. The input capacitance is 945 pF at 25V drain-source voltage. The maximum power dissipation is 79W at case temperature. The device operates over a junction temperature range of -55°C to 175°C. The maximum gate-source voltage is ±25V, ensuring robust drive capability. This MOSFET is suitable for applications such as power supplies, motor control, and DC-DC converters.
60V.
30A at case temperature.
40 mΩ maximum at 15A drain current and 10V gate voltage.
4V maximum at 250µA drain current.
-55°C to 175°C junction temperature.
TO-220-3 through-hole.
RoHS3 Compliant (unverified).