| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
130 pcs
|
130 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The FQP2P40-F080 is a P-Channel enhancement mode MOSFET manufactured by On Semiconductor. It is designed for high voltage applications with a maximum drain-source voltage of 400V and continuous drain current of 2A (Tc). The device features a low on-resistance of 6.5 Ohm at 1A gate drive of 10V, ensuring efficient switching. With a gate threshold voltage of 5V at 250µA, it is suitable for logic-level drive. The MOSFET is housed in a standard TO-220-3 through-hole package, allowing easy mounting on heatsinks. The maximum power dissipation is 63W (Tc), and it operates over a junction temperature range of -55°C to 150°C. Typical applications include power supply circuits, motor control, and DC-DC converters requiring high voltage P-Channel switching.
400V.
TO-220-3 through-hole package.
-55°C to 150°C (junction temperature).
RoHS3 compliant (unverified, low confidence).
6.5 Ohm at 1A, 10V.
5V at 250µA drain current.
63W (at case temperature).