FQP2N90 N-Channel MOSFET with 900V drain-source voltage and 2.2A continuous drain current. Features low on-resistance of 7.2 Ohm and is housed in a TO-220-3 through-hole package.
Mfr Part #:

FQP2N90

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 900V drain-source voltage and 2.2A continuous drain current. Features low on-resistance of 7.2 Ohm and is housed in a TO-220-3 through-hole package.
✓ Total Stock: 98,000 pcs

FQP2N90 Available from 2 distributors

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✓ Non-Authorised
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Non-Authorised Inventory information
95,000 pcs
95000 pcs On Request 1 On Request On Request On Request On Request On Request
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3,000 pcs
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FQP2N90 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQP2N90 Description

Short technical summary and product information.

The FQP2N90 is an N-Channel enhancement mode MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications requiring a drain-source voltage rating of 900V and a continuous drain current of 2.2A. The device features a maximum on-resistance of 7.2 Ohm at a gate drive of 10V and a drain current of 1.1A, ensuring efficient conduction with minimal power loss.

 

Key electrical characteristics include a gate threshold voltage of 5V maximum, a gate charge of 15nC, and an input capacitance of 500pF at 25V drain-source voltage, which contributes to fast switching performance. The maximum power dissipation is 85W at case temperature, and the device can operate over a junction temperature range from -55°C to 150°C.

 

The FQP2N90 is supplied in a standard TO-220-3 through-hole package, facilitating easy mounting on PCBs and heatsinks. It is suitable for applications such as switched-mode power supplies, motor control, and lighting ballasts. The part is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).

FQP2N90 Quick Information

Product Type: MOSFET
Canonical Name: FQP2N90 N-Channel MOSFET
Subcategory: N-Channel MOSFET

FQP2N90 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP2N90 Features

  • N-Channel MOSFET with 900V drain-source voltage.
  • Continuous drain current rating of 2.2A.
  • Low on-resistance of 7.2 Ohm typical.
  • Through-hole mounting in TO-220-3 package.
  • Wide operating temperature range -55°C to 150°C.

FQP2N90 Applications

  • Ideal for high-voltage power supply circuits.
  • Suitable for motor control inverter designs.
  • Used in lighting ballast and converter stages.
  • Applicable in switching regulator topologies.

FQP2N90 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQP2N90?

The maximum drain-source voltage (Vdss) is 900V.

What is the maximum continuous drain current?

The continuous drain current is 2.2A at case temperature.

What is the package type for the FQP2N90?

The device is housed in a TO-220-3 through-hole package.

What is the operating temperature range?

The junction operating temperature range is -55°C to 150°C.

Is the FQP2N90 RoHS compliant?

Yes, it is marked as RoHS3 Compliant (unverified, low confidence).

What is the typical on-resistance?

The maximum on-resistance is 7.2 Ohm at Vgs=10V and Id=1.1A.

What is the gate threshold voltage?

The maximum gate threshold voltage is 5V at Id=250µA.

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