| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,898 pcs
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1898 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQP2N80 is an N-Channel enhancement mode power field effect transistor manufactured by Fairchild Semiconductor using their proprietary planar stripe, DMOS technology. This advanced technology is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes.
Key electrical specifications include a Drain-Source Voltage (VDSS) of 800V, a continuous Drain Current (ID) of 2.4A at 25°C, and a maximum Static Drain-Source On-Resistance (RDS(on)) of 6.3Ω at VGS = 10V. It also offers a typical Gate Charge (Qg) of 12 nC and a typical Reverse Transfer Capacitance (Crss) of 5.5 pF, indicating fast switching capabilities.
The device is housed in a TO-220 package, making it suitable for through-hole mounting. Its thermal characteristics include a Junction-to-Case thermal resistance (RθJC) of 1.47°C/W. The operating and storage temperature range is from -55°C to +150°C.
This MOSFET is well-suited for high efficiency switch mode power supply applications due to its robust design and performance characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDSS) for the FQP2N80 is 800V.
The continuous drain current (ID) for the FQP2N80 at 25°C is 2.4A.
The typical gate threshold voltage (VGS(th)) for the FQP2N80 is 3V.
The typical static drain-source on-resistance (RDS(on)) for the FQP2N80 is 4.9 Ohm at VGS = 10V, with a maximum of 6.3 Ohm.
The FQP2N80 is available in a TO-220 package.
The operating and storage temperature range for the FQP2N80 is -55°C to +150°C.