| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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496 pcs
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496 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP2N80 is a single N-Channel MOSFET from On Semiconductor. It is built using MOSFET (Metal Oxide) technology and is designed for high-voltage switching applications.
The device features a maximum drain-source voltage (Vdss) of 800V and a continuous drain current rating of 2.4A at case temperature (Tc). The maximum drain-source on-resistance (Rds(on)) is 6.3 Ohms at a gate voltage (Vgs) of 10V and a drain current of 1.2A.
The FQP2N80 comes in a through-hole TO-220-3 package for easy mounting on a PCB or heatsink. It has a maximum power dissipation of 85W at case temperature and operates over a junction temperature range of -55°C to 150°C. The input capacitance (Ciss) is typically 550pF at 25V drain-source voltage, and the maximum gate charge (Qg) is 15nC at 10V.
The maximum drain-source voltage (Vdss) is 800V.
The maximum continuous drain current is 2.4A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 6.3 Ohms at a drain current of 1.2A and gate voltage of 10V.
It comes in a through-hole TO-220-3 package.
The device operates over a junction temperature range of -55°C to 150°C.