| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQP2N60 is an N-Channel enhancement mode power MOSFET manufactured using Fairchild's planar stripe DMOS technology. It is designed for high efficiency switch mode power supplies. Key specifications include a drain-source voltage of 600V, continuous drain current of 2.4A at 25°C case temperature, and a maximum on-resistance of 4.7Ω at VGS=10V. The device offers low gate charge (typical 9.0 nC) and low reverse transfer capacitance (typical 5.0 pF) for fast switching performance. It is 100% avalanche tested and has improved dv/dt capability. The MOSFET is housed in a TO-220-3 through-hole package, suitable for easy mounting on heatsinks. Operating temperature range is -55°C to 150°C.
600V.
TO-220-3 through-hole package.
-55°C to 150°C.
RoHS3 Compliant (unverified).
Typical 9.0 nC, maximum 11 nC at VGS=10V.
Typical 3.7Ω, maximum 4.7Ω at VGS=10V and ID=1.2A.
2.4A at case temperature 25°C, 1.5A at 100°C.