| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The FQP2N40 is an N-Channel power MOSFET manufactured by On Semiconductor. It features a drain-to-source voltage rating of 400V and a continuous drain current of 1.8A at case temperature. The device offers a maximum power dissipation of 40W. On-resistance is specified at 5.8 Ohms maximum with a gate drive of 10V and 900mA drain current. Gate charge is 5.5nC at 10V, and input capacitance is 150pF at 25V drain-source. The maximum threshold voltage is 5V at 250µA drain current. The gate-source voltage rating is ±30V. The device is designed for through-hole mounting in a TO-220-3 package. It operates over a junction temperature range of -55°C to 150°C.
400V.
TO-220-3 through-hole package.
-55°C to 150°C junction temperature.
Listed as RoHS3 Compliant, though unverified.
5.8 Ohms maximum at 900mA and 10V gate drive.
5.5 nC at 10V gate voltage.
Maximum 5V at 250µA drain current.