| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
49,000 pcs
|
49000 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
5,759 pcs
|
5759 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
5,450 pcs
|
5450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
27 pcs
|
27 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
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| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP27P06 is a P-Channel enhancement mode power MOSFET manufactured by On Semiconductor using their proprietary planar stripe and DMOS technology. This MOSFET is designed for applications requiring high efficiency and reliable switching performance.
It offers a maximum drain-source voltage of -60V and continuous drain current of -27A at 25°C case temperature (derated to -19.1A at 100°C). The typical gate charge is 33 nC and the maximum on-resistance is 70 mOhm at Vgs = -10V and Id = -13.5A. The device can handle pulsed drain currents up to -108A and has a single pulsed avalanche energy rating of 560 mJ.
The MOSFET is housed in a through-hole TO-220-3 package, suitable for easy mounting on heatsinks. It has a maximum power dissipation of 120W at 25°C case temperature and an operating junction temperature range of -55°C to 175°C. The thermal resistance from junction to case is 1.25°C/W.
Typical applications include switched mode power supplies, audio amplifiers, DC motor control, and variable switching power circuits. The device is 100% avalanche tested and features low gate charge and low reverse transfer capacitance for improved switching performance.
The maximum drain-source voltage (Vdss) is -60V.
The FQP27P06 is available in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 175°C.
The FQP27P06 is marked as RoHS3 compliant, but this status is unverified. The datasheet indicates Pb-Free and Halide Free.
The typical gate charge (Qg) is 33 nC at Vgs = -10V.
The single pulsed avalanche energy (EAS) is 560 mJ under specified conditions.
The maximum on-resistance is 70 mOhm at Vgs = -10V and Id = -13.5A.